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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD211 DESCRIPTION *With TO-3 package *Large current capability *Wide area of safe operation APPLICATIONS *For power amplifier and switching applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 60 60 6 10 100 150 -55~150 UNIT V V V A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=50mA ;IB=0 IE=1mA ;IC=0 IC=5A ; IB=0.5A IC=5A ; IB=0.5A VCB=60V; IE=0 VEB=6V; IC=0 IC=5A ; VCE=4V IC=1A ; VCE=12V 30 8 MIN 60 6 TYP. 2SD211 MAX UNIT V V 1.5 2.5 0.1 0.1 V V mA mA MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD211 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 |
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